Datasheet Details
| Part number | C4H2350N05 |
|---|---|
| Manufacturer | Ampleon |
| File Size | 1.41 MB |
| Description | Power GaN transistor |
| Datasheet |
 C4H2350N05 Datasheet
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General Description
5 W GaN packaged power transistor for base station applications.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a class-AB application demo circuit.
Key Features
- Excellent digital pre-distortion capability.
- High efficiency.
- Designed for broadband operation.
- Lower output capacitance for improved performance in.