C4H2350N05 - Power GaN transistor

Description

5 W GaN packaged power transistor for base station applications.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a class-AB application demo circuit.

Features

Excellent digital pre-distortion capability.
High efficiency.
Designed for broadband operation.
Lower output capacitance for improved performance in.

Ampleon

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Datasheet Details

Part number	C4H2350N05
Manufacturer	Ampleon
File Size	1.41 MB
Description	Power GaN transistor
Datasheet	C4H2350N05 Datasheet
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C4H2350N05 Power GaN transistor Rev. 1 — 8 July 2021 Product data sheet 1. Product profile 1.1 General description 5 W GaN packaged power transistor for base station applications. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB application demo circuit. VDS = 48 V; IDq = 10 mA; unless otherwise specified. Test signal f IDq VDS PL(AV) Gp D ACPR PL(3dB) (MHz) (mA) (V) (dBm) (dB) (%) (dBc) (dBm) 1-carrier W-CDMA [1] 2496 to 2690 10 48 22.2 18.5 13.0 34 - pulsed CW [2] 2496 to 2690 10 48 - - - - 36.6 [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.7 dB at 0.01 % probability on CCDF. [2] Test signal: pulsed CW; tp = 12 s;  = 10 %. 1.

Published: Oct 6, 2024 |