C4H2350N05
C4H2350N05 is Power GaN transistor manufactured by Ampleon.
description
5 W Ga N packaged power transistor for base station applications.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB application demo circuit. VDS = 48 V; IDq = 10 m A; unless otherwise specified.
Test signal f
IDq
VDS PL(AV) Gp D ACPR PL(3d B)
(MHz)
(m A) (V) (d Bm) (d B) (%) (d Bc) (d Bm)
1-carrier W-CDMA [1] 2496 to 2690 10 48 22.2 18.5 13.0
- 34
- pulsed CW [2]
2496 to 2690 10 48
- -
- -
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.7 d B at 0.01 % probability on
CCDF.
[2] Test signal: pulsed CW; tp = 12 s; = 10 %.
1.2 Features and benefits
- Excellent digital pre-distortion capability
- High efficiency
- Designed for broadband operation
- Lower output capacitance for improved performance in applications
- For Ro HS pliance see the product details on the Ampleon website
1.3 Applications
- RF power amplifier for base stations and multi carrier applications in the 2300 MHz to 5000 MHz frequency range
Power Ga N transistor
2. Pinning information
2.1 Pinning pin 1 index n.c. 1
6 n.c. gate 2
5 drain
Fig 1. n.c. 3
4 n.c. amp01506
Transparent top view The exposed backside of the package is the ground terminal of the device.
Pin configuration
2.2 Pin description
Table 2. Symbol n.c. gate n.c. n.c. drain n.c.
Pin description
Pin 1 2 3 4 5 6
Description not connected gate not connected not connected drain not...
