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CLF1G0035S-200P - Broadband RF power GaN HEMT

Download the CLF1G0035S-200P datasheet PDF. This datasheet also covers the CLF1G0035-200P variant, as both devices belong to the same broadband rf power gan hemt family and are provided as variant models within a single manufacturer datasheet.

General Description

The CLF1G0035-200P and CLF1G0035S-200P are 200 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.

Table 1.

CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo board.

Key Features

  • Frequency of operatio.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CLF1G0035-200P-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CLF1G0035S-200P
Manufacturer Ampleon
File Size 661.45 KB
Description Broadband RF power GaN HEMT
Datasheet download datasheet CLF1G0035S-200P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CLF1G0035-200P; CLF1G0035S-200P Broadband RF power GaN HEMT Rev. 1 — 22 April 2016 Product data sheet 1. Product profile 1.1 General description The CLF1G0035-200P and CLF1G0035S-200P are 200 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz. Table 1. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo board. Test signal f PL Gp D (MHz) (W) (dB) (%) 1-Tone CW 1700 200 11 47 2000 200 10 52 2300 200 9 58 1-Tone pulsed [1] 1700 200 14 46 2000 200 14 48 2300 200 13 51 [1] Pulsed RF; tp = 100 s;  = 10 %. Table 2. 2-Tone CW application information Typical 2-Tone performance at Tcase = 25 C; IDq = 600 mA; VDS = 50 V in a class-AB broadband demo board.