Anachip AF4928N
The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.FEATURES
- Low On-resistance - Simple Drive Requirement - Dual N MOSFET Package - Pb Free Plating Product GENERAL DESCRIPTION
Product Summary BVDSS (V) 30 RDS(ON) (mΩ) 26 ID (A) 6.8 Pin Assignments Pin Descriptions Pin NameDESCRIPTION
Channel 1/2 Source Channel 1/2 Gate Channel 1/2 Drain S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 S1/2 G1/2 D1/2 SO-8 Ordering information A X Feature F :MOSFET PN 4928N X X Package S: SO-8 Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Oct 13, 2005 1/5 AF4928N N-Channel Enhancement Mode Power MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TA=25ºC TA=70ºC TA=25ºC Rating 30 ±20 6.8 5.5 40 2 0.