FEATURES
Laser trimmed to high accuracy 10.000 V ±5 mV (L and U models) Trimmed temperature coefficient 5 ppm/°C maximum, 0°C to 70°C (L model) 10 ppm/°C maximum, −55°C to +125°C (U model) Excellent long-term stability 25 ppm/1000 hrs (noncumulative) −10 V reference capability Low quiescent current: 1.0 mA maximum 10 mA current output capability 3-pin TO-5 package MIL-STD-883 compliant versions available GENERAL DESCRIPTION
Laser wafer trimming (LWT) is used to trim both the initial error at +25°C as well as the temperature coefficient, resulting in high precision performance previously available only in expensive hybrids or oven regulated modules. Most important, no external components are required to achieve full accuracy and significant stability to low power systems. In addition, total supply current to the device, including the output buffer amplifier (which can supply up to 10 mA) is typically 750 μA. The long-term stability of the band gap design is equivalent to selected Zener reference diodes.
Analog Devices
