• Part: ADG636
  • Description: 1 pC Charge Injection/ 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch
  • Manufacturer: Analog Devices
  • Size: 147.68 KB
Download ADG636 Datasheet PDF
Analog Devices
ADG636
ADG636 is 1 pC Charge Injection/ 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch manufactured by Analog Devices.
a 1 pC Charge Injection, 100 pA Leakage CMOS ؎5 V/+5 V/+3 V Dual SPDT Switch ADG636 FUNCTIONAL BLOCK DIAGRAM S1A 4 Features 1 pC Charge Injection ؎2.7 V to ؎ 5.5 V Dual Supply +2.7 V to +5.5 V Single Supply Automotive Temperature Range: - 40؇ C to +125؇C 100 pA (Max @ 25؇ C) Leakage Currents 85 ⍀ Typ On Resistance Rail-to-Rail Operation Fast Switching Times Typical Power Consumption (<0.1 ␮W) TTL/CMOS patible Inputs 14-Lead TSSOP Package APPLICATIONS Automatic Test Equipment Data Acquisition Systems Battery-Powered Instruments munication Systems Sample-and-Hold Systems Remote Powered Equipment Audio and Video Signal Routing Relay Replacement Avionics D1 S1B 5 S2A...