ADG636 Datasheet 1 pC Charge Injection/ 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch

Manufacturer: Analog Devices

Overview: a 1 pC Charge Injection, 100 pA Leakage CMOS ؎5 V/+5 V/+3 V Dual SPDT Switch ADG636 FUNCTIONAL BLOCK DIAGRAM ADG636 S1A.

Datasheet Details

Part number	ADG636
Manufacturer	Analog Devices
File Size	147.68 KB
Description	1 pC Charge Injection/ 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch
Download	ADG636 Download (PDF)

PRODUCT HIGHLIGHTS The ADG636 is a monolithic device, comprising two independently selectable CMOS SPDT (Single Pole, Double Throw) switches.

When on, each switch conducts equally well in both directions.

The ADG636 operates from a dual ± 2.7 V to ± 5.5 V supply, or from a single supply of +2.7 V to +5.5 V.

1 pC Charge Injection ؎2.7 V to ؎ 5.5 V Dual Supply +2.7 V to +5.5 V Single Supply Automotive Temperature Range:.
40؇ C to +125؇C 100 pA (Max @ 25؇ C) Leakage Currents 85 ⍀ Typ On Resistance Rail-to-Rail Operation Fast Switching Times Typical Power Consumption (.

Part Number	Description
ADG633	Triple SPDT Switch
ADG601	SPST Switches
ADG602	SPST Switches
ADG604	1 pC Charge Injection/ 100 pA Leakage CMOS 5 V/5 V/3 V 4-Channel Multiplexer
ADG608	3 V/5 V/ 4/8 Channel High Performance Analog Multiplexers
ADG609	3 V/5 V/ 4/8 Channel High Performance Analog Multiplexers
ADG611	Quad SPST Switches
ADG612	Quad SPST Switches
ADG613	Quad SPST Switches
ADG619	CMOS +-5 V/ +5V 4 OHM SINGLE SPDT SWITCHES