• Part: ADG722
  • Description: CMOS Low Voltage 4 ohm Dual SPST Switches
  • Manufacturer: Analog Devices
  • Size: 253.46 KB
Download ADG722 Datasheet PDF
Analog Devices
ADG722
ADG722 is CMOS Low Voltage 4 ohm Dual SPST Switches manufactured by Analog Devices.
FEATURES 1.8 V to 5.5 V single supply 4 Ω (max) on resistance Low on resistance flatness - 3 d B bandwidth >200 MHz Tiny package options 8-lead MSOP 3 mm × 2 mm LFCSP (A grade) Fast switching times t ON, 20 ns t OFF, 10 ns Low power consumption (<0.1 μW) TTL/CMOS patible APPLICATIONS USB 1.1 signal switching circuits Cell phones PDAs Battery-powered systems munication systems Sample hold systems Audio signal routing Video switching Mechanical reed relay replacement FUNCTIONAL BLOCK DIAGRAMS ADG721 S1 S1 IN1 D1 D1 D2 IN2 IN2 S2 IN1 D2 S2 Figure 1. ADG723 S1 D1 IN2 Figure 2. IN1 D2 S2 00045-003 SWITCHES SHOWN FOR A LOGIC "0" INPUT Figure 3. GENERAL DESCRIPTION The ADG721, ADG722, and ADG723 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. The devices are packaged in both a tiny 3 mm × 2 mm LFCSP and an MSOP, making them ideal for space-constrained applications. The ADG721, ADG722, and ADG723 are designed to operate from a single 1.8 V to 5.5 V supply, making them ideal for use in battery-powered instruments and with the new generation of DACs and ADCs from Analog Devices, Inc. The ADG721, ADG722, and ADG723 contain two independent single-pole/single-throw (SPST) switches. The ADG721 and ADG722 differ only in that both switches are normally open and normally closed, respectively. In the ADG723, Switch 1 is normally open and Switch 2 is normally closed. Each switch of the ADG721, ADG722, and ADG723 conducts equally well in both directions when on. The ADG723 exhibits break-before-make switching action. PRODUCT HIGHLIGHTS 1. 1.8 V to 5.5 V single-supply operation. 2. Very low RON (4 Ω max at 5 V, 10 Ω max at 3 V). 3. Low on resistance flatness. 4. - 3 d B bandwidth >200 MHz. 5. Low power dissipation. CMOS construction ensures low power dissipation. 6. 8-lead MSOP and 3 mm × 2 mm LFCSP. Rev....