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ADL8121 - Low Noise Amplifier

General Description

The ADL8121 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.025 GHz to 12 GHz.

Key Features

  • Low noise figure: 2.5 dB typical at 0.025 GHz to 10 GHz.
  • Single positive supply (self biased).
  • High gain: 16.5 dB typical at 0.025 GHz to 10 GHz.
  • High OIP3: 36 dBm typical at 0.025 GHz to 10 GHz.
  • RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet ADL8121 GaAs, pHEMT, MMIC, Low Noise Amplifier, 0.025 GHz to 12 GHz FEATURES ► Low noise figure: 2.5 dB typical at 0.025 GHz to 10 GHz ► Single positive supply (self biased) ► High gain: 16.5 dB typical at 0.025 GHz to 10 GHz ► High OIP3: 36 dBm typical at 0.025 GHz to 10 GHz ► RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP APPLICATIONS ► Test instrumentation ► Military communications ► Military radar ► Telecommunications GENERAL DESCRIPTION The ADL8121 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.025 GHz to 12 GHz. The ADL8121 provides a typical gain of 16.5 dB, a 2.