ADL9005
Description
The ADL9005 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), wideband, LNA that operates from 0.01 to 26.5 GHz. The ADL9005 provides a typical gain of 17.5 dB from 0.01 GHz to 14 GHz with a positive gain slope from 14 GHz to 20 GHz, a 13.5 dBm typical output power at 1 dB compression (OP1dB) from 0.01 GHz to 20 GHz, a 2.5 dB typical noise.
Key Features
- Single positive supply
- Low noise figure: 2.5 dB typical from 0.01 GHz to 14 GHz
- High gain: 17.5 dB typical from 0.01 GHz to 14 GHz
- OP1dB: 13.5 dBm typical from 0.01 GHz to 20 GHz
- High OIP3: 26 dBm typical from 0.01 GHz to 14 GHz
- RoHS-compliant, 4 mm × 4 mm, LFCSP
