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ADRF5130 - Silicon SPDT / Reflective Switch

Description

The ADRF5130 is a high power, reflective, 0.7 GHz to 3.8 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package.

The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations.

Features

  • Reflective, 50 Ω design Low insertion loss 0.6 dB typical to 2.0 GHz 0.7 dB typical to 3.5 GHz High isolation 50 dB typical to 2.0 GHz 46 dB typical to 3.5 GHz High power handling RF input power, continuous wave (CW) at TCASE = 85°C 43 dBm maximum operating 46.5 dBm absolute maximum rating High linearity 0.1 dB compression (P0.1dB): 46 dBm typical Input third-order intercept (IP3) 68 dBm typical to 2 GHz 65 dBm typical to 3.5 GHz ESD ratings Human body model (HBM): 2 kV, Class 2 Charged device m.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet High Power, 44 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 3.8 GHz ADRF5130 FEATURES Reflective, 50 Ω design Low insertion loss 0.6 dB typical to 2.0 GHz 0.7 dB typical to 3.5 GHz High isolation 50 dB typical to 2.0 GHz 46 dB typical to 3.5 GHz High power handling RF input power, continuous wave (CW) at TCASE = 85°C 43 dBm maximum operating 46.5 dBm absolute maximum rating High linearity 0.1 dB compression (P0.1dB): 46 dBm typical Input third-order intercept (IP3) 68 dBm typical to 2 GHz 65 dBm typical to 3.5 GHz ESD ratings Human body model (HBM): 2 kV, Class 2 Charged device model (CDM): 1.
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