• Part: ADuM3123
  • Description: Isolated Precision Gate Driver
  • Manufacturer: Analog Devices
  • Size: 585.56 KB
Download ADuM3123 Datasheet PDF
Analog Devices
ADuM3123
ADuM3123 is Isolated Precision Gate Driver manufactured by Analog Devices.
FEATURES - 4.0 A output short-circuit pulsed current - Isolated working voltage - Secondary side to input side: 537 V - High frequency operation: 1 MHz maximum - 3.3 V to 5 V input logic - 4.5 V to 18 V output drive - Undervoltage lockout (UVLO): 2.8 V VDD1 - Precise timing characteristics - 64 ns maximum isolator and driver propagation delay - plementary metal oxide semiconductor (CMOS) input logic levels - High mon-mode transient immunity: >25 k V/µs - High junction temperature operation: 125°C - Default low output - Safety and regulatory approvals - UL 1577 - VISO = 3000 V rms for 1 minute - IEC / EN / CSA 62368-1 - IEC / CSA 60601-1 - IEC / CSA 61010-1 - DIN EN IEC 60747-17 (VDE 0884-17) - VIORM = 565 V peak - Narrow body, 8-lead SOIC APPLICATIONS - Switching power supplies - Isolated gate bipolar transistors (IGBT)/MOSFET gate drives - Industrial inverters FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The ADu M31231 is a 4.0 A isolated, single channel driver that employs Analog Devices, Inc., i Coupler® technology to provide precision isolation. The ADu M3123 provides 3000 V rms isolation in the narrow-body, 8-lead SOIC package. bining high speed CMOS and monolithic transformer technology, these isolation ponents provide outstanding performance characteristics superior to alternatives such as the bination of pulse transformers and gate drivers. The ADu M3123 operates with an input supply ranging from 3.0 V to 5.5 V, providing patibility with lower voltage systems. In parison to gate drivers employing high voltage level translation methodologies, the ADu M3123 offers the benefit of true, galvanic isolation between the input and the output. The output can continuously operate up to 380 V rms relative to the input. As a result, the ADu M3123 provides reliable control over the switching characteristics of IGBT/MOSFET configurations over a wide range of positive and negative switching voltages. Figure 1. 1 Protected by U.S. Patents 5,952,849; 6,873,065; 7,075,239. Other...