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HMC-ALH102 - GaAs HEMT MMIC WIDEBAND LOW-NOISE AMPLIFIER

General Description

The HMC-ALH102 is a GaAs MMIC HEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz.

The amplifier provides 11.6 dB of gain at 10 GHz, 2.5 dB noise figure and +10 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +2V supply voltage.

Key Features

  • Noise Figure: 2.5 dB Gain: 11.6 dB @ 10 GHz P1dB Output Power: +10 dBm Supply Voltage: +2V @ 55 mA Die Size: 3.0 x 1.435 x 0.1 mm General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LOW NOISE AMPLIFIERS - CHIP v03.0118 Typical Applications This HMC-ALH102 is ideal for: • Wideband Communications Receivers • Surveillance Systems • Point-to-Point Radios • Point-to-Multi-Point Radios • Military & Space • Test Instrumentation Functional Diagram HMC-ALH102 GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz Features Noise Figure: 2.5 dB Gain: 11.6 dB @ 10 GHz P1dB Output Power: +10 dBm Supply Voltage: +2V @ 55 mA Die Size: 3.0 x 1.435 x 0.1 mm General Description The HMC-ALH102 is a GaAs MMIC HEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 11.6 dB of gain at 10 GHz, 2.5 dB noise figure and +10 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +2V supply voltage.