HMC-ALH445 Datasheet | Analog Devices

AMPLIFIERS - LOW NOISE - CHIP v03.0410 1 Typical Applications This HMC-ALH445 is ideal for: - Wideband munication Systems - Point-to-Point Radios - Point-to-Multi-Point Radios - Military & Space - Test Instrumentation Functional Diagram Ga As HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz Features Noise Figure: 3.9 d B @ 28 GHz Gain: 9 d B P1d B Output Power: +12 d Bm @ 28 GHz Supply Voltage: +5V @ 45 m A Die Size: 1.6 x 1.6 x 0.1 mm General Description The HMC-ALH445 is a Ga As MMIC HEMT self-biased, wideband Low Noise Amplifier die which operates between 18 and 40 GHz. The amplifier provides 9 d B of gain, 3.9 d B noise figure at 28 GHz and +12 d Bm of output power at 1 d B gain pression while requiring only 45 m A from a single +5V supply. The HMC-ALH445 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size. Electrical Specifications- , TA = +25° C, Vdd= +5V Parameter Min. Frequency Range Gain Noise Figure Input Return Loss Output Return Loss Output Power for 1 d B pression Supply Current (Idd) (Vdd = 5V) - Unless otherwise indicated, all measurements are from probed die Typ. 18 - 28 9 4 10 15 12...