HMC-ALH509 Datasheet | Analog Devices

Amplifiers - CHIP v05.0713 Typical Applications This HMC-ALH509 is ideal for: - Short Haul / High Capacity Links - Automotive Radar - E-Band munication Systems - Test & Measurement Ga As HEMT LOW NOISE AMPLIFIER 71 - 86 GHz Features Noise Figure: 5 d B P1d B: +7 d Bm Gain: 14 d B Supply Voltage: +2V 50 Ohm Matched Input/Output Die Size: 3.20 x 1.60 x 0.1 mm Functional Diagram General Description The HMC-ALH509 is a three stage Ga As HEMT MMIC Low Noise Amplifier (LNA) which operates between 71 and 86 GHz. The HMC-ALH509 Features 14 d B of small signal gain, 5 d B of noise figure and an output power of +7 d Bm at 1d B pression from a +2V supply voltage. All bond pads and the die backside are Ti/Au metallized. This versatile LNA is patible with conventional die attach methods, as well as thermopression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifications, TA = +25° C, Vdd = 2V- Parameter Min. Frequency Range Gain Noise Figure Input Return Loss Output Return Loss Output Power for 1 d B pression (P1d B) Supply Current (Idd)(Vdd=2V, Vgg= -0.2V Typ.) - Unless otherwise indicated, all measurements are from probed die Typ. 71 - 86 14 5 14 10 7...