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HMC-AUH312 - Low Noise Wideband Amplifier

Description

The HMC-AUH312 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), HEMT, low noise, wideband amplifier die that operates between 500 MHz and 80 GHz, providing a typical 3 dB bandwidth of 80 GHz.

Features

  • Small signal gain: >8 dB 80 GHz distributed amplifier Configurable with or without bias tees for VDD and VGG1 bias Low power dissipation 300 mW with bias tee at VDD = 5 V 360 mW without bias tee at VDD = 6 V 480 mW without bias tee at VDD = 8 V Die size: 1.2 mm × 1.0 mm × 0.1 mm.

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Datasheet Details

Part number HMC-AUH312
Manufacturer Analog Devices
File Size 315.20 KB
Description Low Noise Wideband Amplifier
Datasheet download datasheet HMC-AUH312 Datasheet
Additional preview pages of the HMC-AUH312 datasheet.

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Full PDF Text Transcription

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Data Sheet 0.5 GHz to 80 GHz, GaAs, HEMT, MMIC, Low Noise Wideband Amplifier HMC-AUH312 FEATURES Small signal gain: >8 dB 80 GHz distributed amplifier Configurable with or without bias tees for VDD and VGG1 bias Low power dissipation 300 mW with bias tee at VDD = 5 V 360 mW without bias tee at VDD = 6 V 480 mW without bias tee at VDD = 8 V Die size: 1.2 mm × 1.0 mm × 0.
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