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HMC1114 - Power Amplifier

General Description

The HMC1114 is a gallium nitride (GaN), broadband power amplifier, delivering 10 W with more than 50% power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.8 GHz.

The HMC1114 provides ±0.5 dB gain flatness.

Key Features

  • High saturated output power (PSAT): 41.5 dBm typical High small signal gain: 35 dB typical High power gain for saturated output power: 25.5 dB typical Bandwidth: 2.7 GHz to 3.8 GHz High power added efficiency (PAE): 54% typical High output IP3: 44 dBm typical Supply voltage: VDD = 28 V at 150 mA 32-lead, 5 mm × 5 mm LFCSP_CAV package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet FEATURES High saturated output power (PSAT): 41.5 dBm typical High small signal gain: 35 dB typical High power gain for saturated output power: 25.5 dB typical Bandwidth: 2.7 GHz to 3.8 GHz High power added efficiency (PAE): 54% typical High output IP3: 44 dBm typical Supply voltage: VDD = 28 V at 150 mA 32-lead, 5 mm × 5 mm LFCSP_CAV package APPLICATIONS Extended battery operation for public mobile radios Power amplifier stage for wireless infrastructure Test and measurement equipment Commercial and military radars General-purpose transmitter amplification GENERAL DESCRIPTION The HMC1114 is a gallium nitride (GaN), broadband power amplifier, delivering 10 W with more than 50% power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.8 GHz. The HMC1114 provides ±0.