HMC347B Datasheet Text
Data Sheet
GaAs, SPDT Switch, Nonreflective, 0.1 GHz to 20 GHz HMC347B
Features
Broadband frequency range: 0.1 GHz to 20 GHz Nonreflective, 50 Ω design Low insertion loss: 1.7 dB typical to 20 GHz High isolation: 46 dB typical to 20 GHz High input linearity
Input P1dB: 25 dBm typical Input IP3: 41 dBm typical High power handling 27 dBm through path 25 dBm terminated path 10-pad, 1.3 mm × 0.85 mm × 0.102 mm CHIP
APPLICATIONS
Test instrumentations Microwave radios and very small aperture terminals (VSATs) Military radios, radars, electronic counter measure (ECMs) Broadband telemunications systems
FUNCTIONAL BLOCK DIAGRAM
RFC
CTRLB 3
4
5 CTRLA
CTRLA 2
6 CTRLB
RF1 1
50Ω
10
9
8
50Ω
CTRLA CTRLB CTRLA
Figure 1.
7 RF2
22319-001
GENERAL DESCRIPTION
The HMC347B is a broadband, nonreflective gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) SPDT monolithic microwave integrated circuit (MMIC) chip. The switch operates from 0.1 GHz to 20 GHz with an insertion loss of 1.7 dB and an isolation of 46 dB to 20 GHz due to the implementation of on-chip, via hole structures.
The switch operates with two negative control voltage inputs (VCTL =
- 5 V or 0 V), requires no supply, and has no current consumption. All electrical performance data is acquired with the RFx pads of the HMC347B connected to 50 Ω transmission lines via one 3.0 mil × 0.5 mil ribbon of minimal length.
Rev. E
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