Datasheet4U Logo Datasheet4U.com

HMC374SC70E - GaAs pHEMT LOW NOISE AMPLIFIER

General Description

The HMC374SC70E is a general purpose broadband Low Noise Amplifier (LNA) for use in the 0.3 3 GHz frequency range.

The LNA provides 15 dB of gain and a 1.6 dB noise figure from a single positive supply of +3.0 to +3.6V.

Key Features

  • Single Supply: Vdd = +3.0 to +3.6V Broadband Performance Low Noise Figure: 1.6 dB High Output IP3: +35 dBm High Gain: 15 dB @ 0.6 GHz General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HMC374 SMT PHEMT LOW NOISE AMPLIFIER Hittite Microwave
HMC374E SMT PHEMT LOW NOISE AMPLIFIER Hittite Microwave
HMC300LM1 SMT MEDIUM POWER GaAs MMIC Hittite Microwave Corporation
HMC304MS8 GaAs MMIC Hittite Microwave Corporation
HMC305LP4 0.5 dB LSB GaAs MMIC Hittite Microwave Corporation

Other Datasheets by Analog Devices

Part Number Description
HMC370LP4 SMT GaAs HBT MMIC x4 ACTIVE FREQUENCY MULTIPLIER
HMC370LP4E SMT GaAs HBT MMIC x4 ACTIVE FREQUENCY MULTIPLIER
HMC3716LP4E HBT DIGITAL PHASE FREQUENCY DETECTOR
HMC372LP3 GaAs PHEMT MMIC LOW NOISE AMPLIFIER
HMC372LP3E GaAs PHEMT MMIC LOW NOISE AMPLIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Amplifiers - SMT Typical Applications The HMC374SC70E is ideal for: • Cellular/PCS/3G • WCS, MMDS & ISM • Fixed Wireless & WLAN • Private Land Mobile Radio Functional Diagram HMC374SC70E v01.0814 GaAs pHEMT LOW NOISE AMPLIFIER 0.3 - 3.0 GHz Features Single Supply: Vdd = +3.0 to +3.6V Broadband Performance Low Noise Figure: 1.6 dB High Output IP3: +35 dBm High Gain: 15 dB @ 0.6 GHz General Description The HMC374SC70E is a general purpose broadband Low Noise Amplifier (LNA) for use in the 0.3 3 GHz frequency range. The LNA provides 15 dB of gain and a 1.6 dB noise figure from a single positive supply of +3.0 to +3.6V. The low noise figure coupled with a high P1dB (17 dBm) and high OIP3 (35 dBm) make this part ideal for cellular applications.