Analog Devices HMC375LP3E
HMC375LP3E is ideal for basestation receivers: • GSM, GPRS & EDGE • CDMA & W-CDMA • DECT Functional Diagram HMC375LP3 / 375LP3E GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Features Noise Figure: 0.9 dB Output IP3: +34 dBm Gain: 17 dB Very Stable Gain vs. This LNA has been optimized to provide 0.9 dB noise figure, 17 dB gain and +33 dBm output IP3 from a single supply of +5V @ 136mA. For applications which require improved noise figure, please see the HMC618LP3(E).HMC375LP3E Specifications
- Package : SMD/SMT
- Operating Voltage : 5V
- Frequency : 2.2GHz
- Channels : 1
- Operating Supply Current : 136mA
- Max Power Dissipation : 1.015W
- Max Operating Temp : 85°C
- Min Operating Temp : -40°C
Source:
Octopart
| Part No. | HMC375LP3E |
|---|---|
| Datasheet | HMC375LP3E Download |
| Manufacturer |  Analog Devices |
| Description | GaAs PHEMT MMIC LOW NOISE AMPLIFIER |
| Buy | Stock & Price |
APPLICATIONS
The HMC375LP3 / Supply & Temperature Single Supply: +5V @ 136 mA 50 Ohm Matched OutputGENERAL DESCRIPTION
The HMC375LP3 & HMC375LP3E high dynamic range GaAs PHEMT MMIC Low Noise Amplifiers are ideal for GSM & CDMA cellular basestation front-end receivers operating between 1.7 and 2.2 GHz. Input and output return losses are 14 dB typical with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. 7 - 74ELECTRICAL SPECIFICATIONS
, TA = +25° C, Vs = +5V Parameter Min. Typ. Max. Frequency Range 1.8 - 1.9 Gain 16.5 18.5 Gain Variation Over Temperature 0.014 0.021 Noise Figure 1.0 1.35 Input Return Loss 12 Output Return Loss 13 Reverse Isolation 35 Output Power for 1dB Compression (P1dB) 16 18.5 Saturated Output Power (Psat) 19.5 Output Third Order Intercept (IP3) (-20 dBm Input Power per tone, 34 1 MHz tone spacing) Supply Current (Idd) 136 Min. Typ. Max. 1.9 - 2.0 15.5 17.5 0.014 0.021 0.95 1.2 13 16 34 16 18.5 19.5 33.5 136 Min. Typ.
