HMC407MS8GE Overview
The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.
HMC407MS8GE Key Features
- LINEAR & POWER
- LINEAR & POWER
- 20 4 4.5 5 5.5 6 6.5 7 7.5 8