HMC408LP3
Features
Gain: 20 d B Saturated Power: +32.5 d Bm @ 27% PAE Single Supply Voltage: +5V Power Down Capability 3x3 mm Leadless SMT Package
General Description
The HMC408LP3 & HMC408LP3E are 5.1
- 5.9 GHz high efficiency Ga As In Ga P Heterojunction Bipolar Transistor (HBT) Power Amplifier MMICs which offer +30 d Bm P1d B. The amplifier provides 20 d B of gain, +32.5 d Bm of saturated power, and 27% PAE from a +5V supply voltage. The input is internally matched to 50 Ohms while the output requires a minimum of external ponents. Vpd can be used for full power down or RF output power/current control. The amplifier is packaged in a low cost, 3x3 mm leadless surface mount package with an exposed base for improved RF and thermal performance.
LINEAR & POWER AMPLIFIERS
- SMT
- 34
Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss- Output Power for 1 d B pression (P1d B) Saturated Output Power...
