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HMC413QS16GE - GaAs InGaP HBT MMIC POWER AMPLIFIER

Download the HMC413QS16GE datasheet PDF. This datasheet also covers the HMC413QS16G variant, as both devices belong to the same gaas ingap hbt mmic power amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

The HMC413QS16G & HMC413QS16GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 1.6 and 2.2 GHz.

The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance.

Key Features

  • Gain: 23 dB Saturated Power: +29.5 dBm 42% PAE Supply Voltage: +2.75V to +5V Power Down Capability Low External Part Count Included in the HMC-DK002 Designer’s Kit General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMC413QS16G_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Analog Devices

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz LINEAR & POWER AMPLIFIERS - SMT 11 Typical Applications This amplifier is ideal for use as a power/driver amplifier for 1.6 - 2.2 GHz applications: • Cellular / PCS / 3G • Portable & Infrastructure • Wireless Local Loop Functional Diagram Features Gain: 23 dB Saturated Power: +29.5 dBm 42% PAE Supply Voltage: +2.75V to +5V Power Down Capability Low External Part Count Included in the HMC-DK002 Designer’s Kit General Description The HMC413QS16G & HMC413QS16GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 1.6 and 2.2 GHz.