Download the HMC414MS8GE datasheet PDF.
This datasheet also covers the HMC414MS8G variant, as both devices belong to the same gaas ingap hbt mmic power amplifier family and are provided as variant models within a single manufacturer datasheet.
General Description
The HMC414MS8G & HMC414MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 2.2 and 2.8 GHz.
The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.
Key Features
Gain: 20 dB Saturated Power: +30 dBm 32% PAE Supply Voltage: +2.75V to +5V Power Down Capability Low External Part Count
Functional Diagram
General.
Note: The manufacturer provides a single datasheet file (HMC414MS8G_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for HMC414MS8GE (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HMC414MS8GE. For precise diagrams, and layout, please refer to the original PDF.
HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz 11 Typical Applications This amplifier is ideal for use as a power amplifier for 2.2 - 2...
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tions This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: • BLUETOOTH • MMDS Features Gain: 20 dB Saturated Power: +30 dBm 32% PAE Supply Voltage: +2.75V to +5V Power Down Capability Low External Part Count Functional Diagram General Description The HMC414MS8G & HMC414MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.
HMC414MS8GE Datasheet
