Download the HMC415LP3E datasheet PDF.
This datasheet also covers the HMC415LP3 variant, as both devices belong to the same gaas ingap hbt mmic power amplifier family and are provided as variant models within a single manufacturer datasheet.
General Description
The HMC415LP3 & HMC415LP3E are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 4.9 and 5.9 GHz.
The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance.
Key Features
Gain: 20 dB
34% PAE @ Psat = +26 dBm
3.7% EVM @ Pout = +15 dBm with 54 Mbps OFDM Signal
Supply Voltage: +3V
Power Down Capability
Low External Part Count
General.
Note: The manufacturer provides a single datasheet file (HMC415LP3_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for HMC415LP3E (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HMC415LP3E. For precise diagrams, and layout, please refer to the original PDF.
v03.0605 HMC415LP3 / 415LP3E GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz LINEAR & POWER AMPLIFIERS - SMT 11 11 - 66 Typical Applications This amplifier is ideal fo...
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FIERS - SMT 11 11 - 66 Typical Applications This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: • 802.11a WLAN • HiperLAN WLAN • Access Points • UNII & ISM Radios Functional Diagram Features Gain: 20 dB 34% PAE @ Psat = +26 dBm 3.7% EVM @ Pout = +15 dBm with 54 Mbps OFDM Signal Supply Voltage: +3V Power Down Capability Low External Part Count General Description The HMC415LP3 & HMC415LP3E are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package w
HMC415LP3E Datasheet
