HMC415LP3E Overview
The HMC415LP3 & HMC415LP3E are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external ponents, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V...