Analog Devices HMC430LP4
The HMC430LP4 & HMC430LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. The VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. The voltage controlled oscillator is packaged in a low cost leadless QFN 4 x 4 mm surface mount package.| Part No. | HMC430LP4 |
|---|---|
| Datasheet | HMC430LP4 Download |
| Manufacturer |  Analog Devices |
| Description | MMIC VCO |
| Buy | Stock & Price |
APPLICATIONS
Low noise MMIC VCO w/Buffer Amplifier for C-Band applications such as:● 802.11a & HiperLAN WLAN
● VSAT Radios
● UNII & Point-to-Point Radios 11 Functional Diagram HMC430LP4 / 430LP4E MMIC VCO w/ BUFFER AMPLIFIER, 5.0 - 5.5 GHz
FEATURES
Pout: +2 dBm Phase Noise: -103 dBc/Hz @100 kHz No External Resonator Needed Single Supply: 3V @ 27 mA 16mm2 Leadless SMT PackageGENERAL DESCRIPTION
Power output is 2 dBm typical from a 3V supply voltage. VCOS & PLOs - SMT 11 - 78ELECTRICAL SPECIFICATIONS
, TA = +25° C, Vcc = +3V Parameter Min. Frequency Range Power Output -1 SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output Tune Voltage (Vtune) 0 Supply Current (Icc) (Vcc= +3.0V) Tune Port Leakage Current Output Return Loss Harmonics 2nd 3rd Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= +5V Frequency Drift Rate Typ. 5.0 - 5.5 2 -103 27 6 -15 -25 12 12 0.8 Max. 10 10 Units GHz dBm dBc/Hz V mA μA dB dBc dBc MHz pp MHz/V MHz/°C Information furnisheFd obyr ApnrailocgeD,edviceeslivisebrey...
