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HMC452QS16G - InGaP HBT

Description

The HMC452QS16G & HMC452QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifiers operating between 0.4 and 2.2 GHz.

Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 22.5 dB at 0.4 GHz and 9 dB at 2.1 GHz.

Features

  • The HMC452QS16G / HMC452QS16GE is ideal for.

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Datasheet preview – HMC452QS16G

Datasheet Details

Part number HMC452QS16G
Manufacturer Analog Devices
File Size 1.07 MB
Description InGaP HBT
Datasheet download datasheet HMC452QS16G Datasheet
Additional preview pages of the HMC452QS16G datasheet.

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Full PDF Text Transcription

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HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz LINEAR & POWER AMPLIFIERS - SMT 11 11 - 134 Typical Applications Features The HMC452QS16G / HMC452QS16GE is ideal for applications requiring a high dynamic range amplifier: • GSM, GPRS & EDGE • CDMA & W-CDMA • CATV/Cable Modem • Fixed Wireless & WLL Output IP3: +48 dBm 22.5 dB Gain @ 400 MHz 9 dB Gain @ 2100 MHz 53% PAE @ +31 dBm Pout +24 dBm CDMA2000 Channel Power@ -45 dBc ACP Single +5V Supply Integrated Power Control (VPD) QSOP16G SMT Package: 29.4 mm2 Functional Diagram General Description The HMC452QS16G & HMC452QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifiers operating between 0.4 and 2.2 GHz.
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