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HMC457QS16G Datasheet InGaP HBT

Manufacturer: Analog Devices

General Description

The HMC457QS16G & HMC457QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifiers operating between 1.7 and 2.2 GHz.

Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz.

Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm.

Overview

HMC457QS16G / 457QS16GE v03.0907 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.

Key Features

  • Output IP3: +46 dBm Gain: 27 dB @ 1900 MHz 48% PAE @ +32 dBm Pout +25 dBm W-CDMA Channel Power @ -50 dBc ACPR Integrated Power Control (Vpd) QSOP16G SMT Package: 29.4 mm2 Included in the HMC-DK002 Designer’s Kit LINEAR & POWER.