Datasheet4U Logo Datasheet4U.com

HMC510LP5 - MMIC VCO

General Description

The HMC510LP5 & HMC510LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs.

The HMC510LP5 & HMC510LP5E integrate resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs.

Key Features

  • Dual Output: Fo = 8.45 - 9.55 GHz Fo/2 = 4.225 - 4.775 GHz Pout: +13 dBm Phase Noise: -116 dBc/Hz @100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm² General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HMC516 GaAs PHEMT MMIC LOW NOISE AMPLIFIER Hittite Microwave Corporation
HMC517 GaAs PHEMT MMIC LOW NOISE AMPLIFIER Hittite Microwave Corporation
HMC519 GaAs PHEMT MMIC LOW NOISE AMPLIFIER Hittite Microwave Corporation
HMC520 GaAs MMIC I/Q MIXER Hittite Microwave
HMC521 GaAs MMIC I/Q MIXER Hittite Microwave

Other Datasheets by Analog Devices

Part Number Description
HMC510LP5E MMIC VCO
HMC511LP5 MMIC VCO
HMC511LP5E MMIC VCO
HMC512LP5 MMIC VCO
HMC512LP5E MMIC VCO

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VCOS WITH Fo/2 OUTPUT - SMT HMC510LP5/510LP5E v05.0114 MMIC VCO WITH HALF FREQUENCY OUTPUT 8.45 - 9.55 GHz Typical Applications Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls • SATCOM • Military End-Use Functional Diagram Features Dual Output: Fo = 8.45 - 9.55 GHz Fo/2 = 4.225 - 4.775 GHz Pout: +13 dBm Phase Noise: -116 dBc/Hz @100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm² General Description The HMC510LP5 & HMC510LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC510LP5 & HMC510LP5E integrate resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs.