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HMC532LP4 - MMIC VCO

General Description

The HMC532LP4 & HMC532LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers.

Key Features

  • Pout: +14 dBm Phase Noise: -103 dBc/Hz @100 KHz No External Resonator Needed Single Supply: +3V @ 85 mA 24 Lead 4x4mm QFN Package: 9 mm2 General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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v01.0508 Typical Applications Low noise MMIC VCO w/Buffer Amplifier for: • VSAT Radio • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls • Military End-Use Functional Diagram 12 HMC532LP4 / 532LP4E MMIC VCO w/ BUFFER AMPLIFIER, 7.1 - 7.9 GHz Features Pout: +14 dBm Phase Noise: -103 dBc/Hz @100 KHz No External Resonator Needed Single Supply: +3V @ 85 mA 24 Lead 4x4mm QFN Package: 9 mm2 General Description The HMC532LP4 & HMC532LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. Covering 7.1 to 7.9 GHz, the VCO’s phase noise performance is excellent over temperature, shock and vibration due to the oscillator’s monolithic structure.