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HMC5805LS6 - GaAs pHEMT MMIC

General Description

The HMC5805LS6 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DC and 40 GHz.

The amplifier provides 13 dB of gain, 33 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while requiring 175 mA from a +10 V supply.

Key Features

  • The HMC5805LS6 is ideal for: High P1dB Output Power: 22 dBm.
  • Test Instrumentation High Psat Output Power: 24 dBm.
  • Microwave Radio & VSAT High Gain: 13.5 dB.
  • Military & Space High Output IP3: 33 dBm.
  • Telecom Infrastructure.
  • Fiber Optics LETE Functional Diagram Supply Voltage: +10 V @ 175 mA 16 Lead Ceramic 6x6 mm SMT Package: 36 mm2 General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HMC5805LS6 v02.1216 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER DC - 40 GHz AMPLIFIERS - LINEEAR & POWER - SMT Typical Applications Features The HMC5805LS6 is ideal for: High P1dB Output Power: 22 dBm • Test Instrumentation High Psat Output Power: 24 dBm • Microwave Radio & VSAT High Gain: 13.5 dB • Military & Space High Output IP3: 33 dBm • Telecom Infrastructure • Fiber Optics LETE Functional Diagram Supply Voltage: +10 V @ 175 mA 16 Lead Ceramic 6x6 mm SMT Package: 36 mm2 General Description The HMC5805LS6 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DC and 40 GHz. The amplifier provides 13 dB of gain, 33 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while requiring 175 mA from a +10 V supply.