HMC6505A Datasheet | Analog Devices

Data Sheet Features Conversion gain: 15 dB typical Sideband rejection: 22 dBc typical Output P1dB pression at maximum gain: 22 dBm typical Output IP3 at maximum gain: 35 dBm typical LO to RF isolation: 4 dB typical LO to IF isolation: 9 dB typical RF return loss: 20 dB typical LO return loss: 10 dB typical IF return loss: 20 dB typical Exposed paddle, 5 mm × 5 mm, 32-terminal, leadless chip carrier package APPLICATIONS Point to point and point to multipoint radios Military radars, electronic warfare (EW), and electronic intelligence (ELINT) Satellite munications Sensors GENERAL DESCRIPTION The HMC6505A is a pact gallium arsenide (GaAs), pseudomorphic (pHEMT), monolithic microwave...