Analog Devices HMC669LP3
The HMC669LP3(E) is ideal for: Noise Figure: 1.4 dB • Cellular/3G and LTE/WiMAX/4G Output IP3: +29 dBm • BTS & Infrastructure Gain: 17 dB • Repeaters and Femtocells Failsafe Operation: • Tower Mounted Amplifiers • Test & Measurement Equipment LETE Functional Diagram Bypass is enabled when LNA is unpowered Single Supply: +3V or +5V 16 Lead 3x3mm QFN Package: 9 mm2 General Description The HMC669LP3(E) is a versatile, high dynamic range GaAs MMIC Low Noise Amplifier that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for receivers and LNA modules operating between 1.7 and 2.2 GHz and provides 1.4 dB noise figure, 17 dB of gain and +29 dBm IP3 from a single supply of +5V @ 86mA.| Part No. | HMC669LP3 |
|---|---|
| Datasheet | HMC669LP3 Download |
| Manufacturer |  Analog Devices |
| Description | GaAs PHEMT MMIC |
| Buy | Stock & Price |
