HMC7149
Features
High Psat: +40 d Bm
Power Gain at Psat: +10 d B
High Output IP3: +39.5 d Bm
Small Signal Gain: 20 d B
Supply Voltage: +28 V @ 680 m A
50 Ohm Matched Input/Output Die Size: 3.4 x 4.5 x 0.1 mm
General Description
The HMC7149 is an 10W Gallium Nitride (Ga N) MMIC Power Amplifier which operates between 6 and 18 GHz. The amplifier typically provides 20d B of small signal gain, +40 d Bm of saturated output power, and +39.5 d Bm output IP3 at +28 d Bm output power per tone. The HMC7149 draws 680 m A current from a +28V DC supply. The RF I/Os are matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All electrical performance data was aquired with the die eutectically attached to 1.02 mm (40 mil) thick Cu Mo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission lines on alumina.
Electrical Specifications, Tc = +25°C, Vdd= Vdd1 =Vdd2 = +28 V, Idd = 680 m A [1]
Parameter Frequency Range Small Signal Gain Gain Flatness Gain Variation Over...
