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HMC741ST89E - InGaP HBT ACTIVE BIAS MMIC

Description

The HMC741ST89E is an InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering 0.05 to 3 GHz.

Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +18.5 dBm output power.

Features

  • P1dB Output Power: +18.5 dBm Gain: 20 dB Output IP3: +42 dBm Cascadable 50 Ohm I/Os Single Supply: +5V Industry Standard SOT89 Package Robust 1000V ESD, Class 1C Stable Current Over Temperature Active Bias Network General.

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Datasheet Details

Part number HMC741ST89E
Manufacturer Analog Devices
File Size 685.60 KB
Description InGaP HBT ACTIVE BIAS MMIC
Datasheet download datasheet HMC741ST89E Datasheet
Additional preview pages of the HMC741ST89E datasheet.

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Full PDF Text Transcription

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Amplifiers - Driver & Gain Block - SMT v02.0710 Typical Applications 8 The HMC741ST89E is ideal for: • Cellular/3G & WiMAX/4G • Fixed Wireless & WLAN • CATV, Cable Modem & DBS • Microwave Radio & Test Equipment • IF & RF Applications Functional Diagram HMC741ST89E InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Features P1dB Output Power: +18.5 dBm Gain: 20 dB Output IP3: +42 dBm Cascadable 50 Ohm I/Os Single Supply: +5V Industry Standard SOT89 Package Robust 1000V ESD, Class 1C Stable Current Over Temperature Active Bias Network General Description The HMC741ST89E is an InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering 0.05 to 3 GHz.
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