HMC757LP4E
Features
Saturated Output Power: 27.5 d Bm @ 21% PAE High Output IP3: 34.5 d Bm High Gain: 20.5 d B DC Supply: +5V @ 400 m A No External Matching Required 24 Lead 4x4 mm SMT Package: 16 mm²
General Description
The HMC757LP4E is a three stage Ga As p HEMT MMIC 1 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC757LP4E provides 20.5 d B of gain, and 27.5 d Bm of saturated output power and 21% PAE from a +5V supply. The RF I/Os are DC blocked and matched to 50 Ohms. The 4x4 mm plastic package eliminates the need for wirebondig, and is patible with surface mount manufacturing techniques.
Amplifiers
- Linear & Power
- SMT
Electrical Specifications, TA = +25° C, Vdd = +5V, Idd = 400m A [1]
Parameter
Min. Typ.
Frequency Range
- 24
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 d B pression (P1d B)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)[2]
Total...
