HMC8038 Datasheet | Analog Devices

FEATURES Nonreflective, 50 Ω design High isolation: 60 d B typical Low insertion loss: 0.8 d B typical High power handling 34 d Bm through path 29 d Bm terminated path High linearity 0.1 d B pression (P0.1d B): 35 d Bm typical Input third-order intercept (IP3): 60 d Bm typical ESD ratings 4 k V human body model (HBM), Class 3A 1.25 k V charged device model (CDM) Single positive supply 3.3 V to 5 V 1.8 V-patible control All off state control 16-lead, 4 mm × 4 mm LFCSP (16 mm2) Pin patible with the HMC849ALP4CE APPLICATIONS Cellular/4G infrastructure Wireless infrastructure Automotive telematics Mobile radios Test equipment FUNCTIONAL BLOCK DIAGRAM 16 NC 15 NC 14 NC 13 NC VDD 1 VCTL 2 RFC 3 NC 4 50Ω 50Ω Figure 1. 12 RF2 11 GND 10 GND 9 RF1 PACKAGE BASE GENERAL DESCRIPTION The HMC8038 is a high isolation, nonreflective, 0.1 GHz to 6.0 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for cellular infrastructure applications, yielding up to 62 d B of isolation up to 4.0 GHz, a low 0.8 d B of insertion loss up to 4.0 GHz, and 60 d Bm of input third-order intercept. Power handling is excellent up to 6.0 GHz, and it offers an input power for an 0.1 d B pression point (P0.1d B) of 35 d Bm (VDD = 5 V). On-chip circuitry operates a single, positive supply voltage from 3.3 V to 5 V, as well as a single, positive voltage control from 0 V to 1.8 V/3.3 V/5.0 V at very low dc currents. An enable input (EN) set to logic high places the switch in an all off state, in which RFC is reflective. The HMC8038 has ESD protection on all device pins, including the RF interface, and can stand 4 k V HMB and 1.25 k V CDM. The HMC8038 offers very fast switching and RF settling times of 150 ns and 170 ns, respectively. The device es in a Ro HSpliant, pact 4 mm × 4 mm LFCSP. Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices...