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HMC8120 - E-Band Variable Gain Amplifier

General Description

The HMC8120 is an integrated E-band, gallium arsenide (GaAs), pseudomorphic (pHEMT), monolithic microwave integrated circuit (MMIC), variable gain amplifier and/or driver amplifier that operates from 71 GHz to 76 GHz.

Key Features

  • Gain: 22 dB typical Wide gain control range: 15 dB typical Output third-order intercept (OIP3): 30 dBm typical Output power for 1 dB compression (P1dB): 21 dBm typical Saturated output power (PSAT): 22 dBm typical DC supply: 4 V at 250 mA No external matching required Die size: 3.599 mm × 1.369 mm × 0.05 mm.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet FEATURES Gain: 22 dB typical Wide gain control range: 15 dB typical Output third-order intercept (OIP3): 30 dBm typical Output power for 1 dB compression (P1dB): 21 dBm typical Saturated output power (PSAT): 22 dBm typical DC supply: 4 V at 250 mA No external matching required Die size: 3.599 mm × 1.369 mm × 0.05 mm APPLICATIONS E-band communication systems High capacity wireless backhaul radio systems Test and measurement 71 GHz to 76 GHz, E-Band Variable Gain Amplifier HMC8120 GENERAL DESCRIPTION The HMC8120 is an integrated E-band, gallium arsenide (GaAs), pseudomorphic (pHEMT), monolithic microwave integrated circuit (MMIC), variable gain amplifier and/or driver amplifier that operates from 71 GHz to 76 GHz.