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HMC815B - I/Q Upconverter

General Description

The HMC815B is a compact gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) upconverter in a RoHS compliant package that operates from 21 GHz to 27 GHz.

Key Features

  • Conversion gain: 12 dB typical Sideband rejection: 20 dBc typical OP1dB compression: 20 dBm typical OIP3: 27 dBm typical 2× LO to RF isolation: 10 dB typical 2× LO to IF isolation: 15 dB typical RF return loss: 12 dB typical LO return loss: 15 dB typical IF return loss: 15 dB typical Exposed pad, 4.90 mm × 4.90 mm, 32-terminal, ceramic LCC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet FEATURES Conversion gain: 12 dB typical Sideband rejection: 20 dBc typical OP1dB compression: 20 dBm typical OIP3: 27 dBm typical 2× LO to RF isolation: 10 dB typical 2× LO to IF isolation: 15 dB typical RF return loss: 12 dB typical LO return loss: 15 dB typical IF return loss: 15 dB typical Exposed pad, 4.90 mm × 4.90 mm, 32-terminal, ceramic LCC APPLICATIONS Point to point and point to multipoint radios Military radars, electronic warfare, and electronic intelligence Satellite communications Sensors 21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter HMC815B FUNCTIONAL BLOCK DIAGRAM 32 GND 31 IF2 30 GND 29 IF1 28 NIC 27 NIC 26 NIC 25 NIC NIC 1 NIC 2 NIC 3 NIC 4 NIC 5 ×2 VDD1 6 NIC 7 NIC 8 NIC = NOT INTERNALLY CONNECTED Figure 1.