HMC815B Overview
The HMC815B is a pact gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) upconverter in a RoHS pliant package that operates from 21 GHz to 27 GHz. This device provides a small signal conversion gain of 12 dB and a sideband rejection of 20 dBc. The HMC815B utilizes a driver amplifier proceeded by an in phase/quadrature (I/Q) mixer where the...
