HMC8205BF10 Datasheet | Analog Devices

FEATURES High PSAT: 46 d Bm High power gain: 20 d B High PAE: 38% Instantaneous bandwidth: 0.3 GHz to 6 GHz Supply voltage: VDD = 50 V at 1300 m A 10-lead LDCC package APPLICATIONS Military jammers mercial and military radar Power amplifier stage for wireless infrastructure Test and measurement equipment GENERAL DESCRIPTION The HMC8205BF10 is a gallium nitride (Ga N) broadband power amplifier delivering 45.5 d Bm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10. 0.3 GHz to 6 GHz, 35 W, Ga N Power Amplifier HMC8205BF10 FUNCTIONAL BLOCK DIAGRAM 1 VDD2 VDD2 2 3 RFIN 4 NC NC 5 PACKAGE BASE GND Figure 1. 10 NC NC 9 8 RFOUT 7 VGG1 VDD1 6 The HMC8205BF10 is ideal for pulsed or continuous wave (CW) applications, such as military jammers, wireless infrastructure, radar, and general-purpose amplification. The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC). 13790-001 Rev. C Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2017- 2018 Analog Devices, Inc. All rights reserved. Technical Support .analog. TABLE OF CONTENTS Features...