Datasheet Details
| Part number | HMC8411LP2FE |
|---|---|
| Manufacturer | Analog Devices |
| File Size | 1.50 MB |
| Description | Low-Noise Amplifier |
| Datasheet | HMC8411LP2FE-AnalogDevices.pdf |
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Overview: Data Sheet HMC8411LP2FE Low Noise Amplifier, 0.01 GHz to 10 GHz.
| Part number | HMC8411LP2FE |
|---|---|
| Manufacturer | Analog Devices |
| File Size | 1.50 MB |
| Description | Low-Noise Amplifier |
| Datasheet | HMC8411LP2FE-AnalogDevices.pdf |
|
|
|
The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz.
The HMC8411LP2FE provides a typical gain of 15.5 dB, a 1.7 dB typical noise figure, and a typical output third-order intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V supply voltage.
The saturated output power (PSAT) of 19.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q), or image rejection mixers.
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|---|---|
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