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HMC8500 Datasheet Gan Power Amplifier

Manufacturer: Analog Devices

Overview: Data Sheet.

General Description

The HMC8500 is a gallium nitride (GaN), broadband power amplifier delivering >10 W with up to 55% power added efficiency (PAE) across an instantaneous bandwidth of 0.01 GHz to 2.8 GHz, and with a ±1.0 dB typical gain flatness.

The HMC8500 is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.

>10 W, 0.01 GHz to 2.8 GHz, GaN Power Amplifier HMC8500 FUNCTIONAL BLOCK DIAGRAM 32 GND 31 NIC 30 NIC 29 NIC 28 NIC 27 NIC 26 NIC 25 GND GND 1 NIC 2 NIC 3 RFIN/VGG 4 RFIN/VGG 5 NIC 6 NIC 7 GND 8 HMC8500 24 GND 23 NIC 22 NIC 21 RFOUT/VDD 20 RFOUT/VDD 19 NIC 18 NIC 17 GND PACKAGE BASE Figure 1.

Key Features

  • High small signal gain: 16.0 dB High PAE: 55% typical Instantaneous bandwidth: 0.01 GHz to 2.8 GHz Supply voltage: VDD = 28 V at 100 mA Internal prematching Simple and compact external tuning for optimal performance 32-lead, 5 mm × 5 mm, LFCSP package.

HMC8500 Distributor