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HMC8500 - GaN Power Amplifier

General Description

The HMC8500 is a gallium nitride (GaN), broadband power amplifier delivering >10 W with up to 55% power added efficiency (PAE) across an instantaneous bandwidth of 0.01 GHz to 2.8 GHz, and with a ±1.0 dB typical gain flatness.

Key Features

  • High small signal gain: 16.0 dB High PAE: 55% typical Instantaneous bandwidth: 0.01 GHz to 2.8 GHz Supply voltage: VDD = 28 V at 100 mA Internal prematching Simple and compact external tuning for optimal performance 32-lead, 5 mm × 5 mm, LFCSP package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet FEATURES High small signal gain: 16.0 dB High PAE: 55% typical Instantaneous bandwidth: 0.01 GHz to 2.8 GHz Supply voltage: VDD = 28 V at 100 mA Internal prematching Simple and compact external tuning for optimal performance 32-lead, 5 mm × 5 mm, LFCSP package APPLICATIONS Extended battery operation for public mobile radios Power amplifier stage for wireless infrastructures Test and measurement equipment Commercial and military radars General-purpose transmitter amplification GENERAL DESCRIPTION The HMC8500 is a gallium nitride (GaN), broadband power amplifier delivering >10 W with up to 55% power added efficiency (PAE) across an instantaneous bandwidth of 0.01 GHz to 2.8 GHz, and with a ±1.0 dB typical gain flatness.