HMC930A
FEATURES
High output power for 1 d B pression (P1d B): 22 d Bm High saturated output power (PSAT): 24 d Bm High gain: 13 d B High output third-order intercept (IP3): 33.5 d Bm Supply voltage: 10 V at 175 m A 50 Ω matched input/output Die size: 2.82 mm × 1.50 mm × 0.1 mm
APPLICATIONS
Test instrumentation Microwave radios and VSATs Military and space Telemunications infrastructure Fiber optics
GENERAL DESCRIPTION
The HMC930A is a gallium arsenide (Ga As), pseudomorphic, high electron mobility transfer (p HEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from dc to 40 GHz. The HMC930A provides 13 d B of gain, 33.5 d Bm output IP3, and 22 d Bm of output power at 1 d B gain pression, requiring 175 m A from a 10 V supply. The HMC930A exhibits a slightly positive gain slope from 8 GHz to
ACG1 ACG2 ACG4 ACG3
13738-001
FUNCTIONAL BLOCK DIAGRAM
2 VGG2 1...
