HMC949
Features
Saturated Output Power: +35.5 d Bm @ 26% PAE High Output IP3: +42 d Bm High Gain: 31 d B DC Supply: +7V @ 1200 m A No External Matching Required Die Size: 2.71 x 1.73 x 0.1 mm
Amplifiers
- Linear & Power
- Chip
Functional Diagram
General Description
The HMC949 is a 4 stage Ga As p HEMT MMIC 2 Watt Power Amplifier with an integrated temperature pensated on-chip power detector which operates between 12 and 16 GHz. The HMC949 provides 31 d B of gain, +35.5 d Bm of saturated output power, and 26% PAE from a +7V supply. The HMC949 exhibits excellent linearity and is optimized for high capacity digital microwave radio. It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT transmitters as well as SAT applications. All data is taken with the chip in a 50 Ohm test fixture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length.
Electrical Specifications
TA = +25° C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200m A [1]
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