MAT12 Overview
The MAT12 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 mA), the MAT12 can achieve outstanding signalto-noise ratios. The high current gain results in superior performance pared to systems incorporating mercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to about 0.5% and low VOS of less than 10 μV typical make the MAT12 ideal for symmetrically balanced designs, which reduce high-order amplifier harmonic distortion. The MAT12 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor...