FEATURES
Very low voltage noise: 1 nV/√Hz maximum at 100 Hz Excellent current gain match: 0.5% typical Low offset voltage (VOS): 200 μV maximum Outstanding offset voltage drift: 0.03 μV/°C typical High gain bandwidth product: 200 MHz Audio, Dual-Matched NPN Transistor MAT12 PIN CONFIGURATION C1 1 6 C2 B1 2 5 B2 E1 3 4 E2 NOTE 1. SUBSTRATE IS CONNECTED TO CASE ON TO-78 PACKAGE. 2. SUBSTRATE IS NORMALLY CONNECTED TO THE MOST NEGATIVE CIRCUIT POTENTIAL, BUT CAN BE FLOATED. Figure 1. 6-Lead TO-78 09044-001 GENERAL DESCRIPTION
Excellent matching of the current gain (ΔhFE) to about 0.5% and low VOS of less than 10 μV typical make the MAT12 ideal for symmetrically balanced designs, which reduce high-order amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base emitter junction. The MAT12 is also an ideal choice for accurate and reliable current biasing and mirroring circuits.
Analog Devices
