REF191-EP Datasheet | Analog Devices

FEATURES Temperature coefficient: 5 ppm/°C maximum High output current: 30 m A Low supply current: 50 µA maximum Initial accuracy: 2.050 V maximum Sleep mode: 15 µA maximum Low dropout voltage Load regulation: 4 ppm/m A typical at TA = 25°C Line regulation: 2 ppm/V typical at TA = 25°C Short-circuit protection ENHANCED PRODUCT FEATURES Supports defense and aerospace applications (AQEC standard) Military temperature range: - 55°C to +125°C Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request APPLICATIONS Portable instruments ADCs and DACs Smart sensors Solar powered applications Loop current powered instruments GENERAL DESCRIPTION The REF191-EP precision band gap voltage reference uses a proprietary temperature drift curvature correction circuit and laser trimming of highly stable, thin film resistors to achieve a very low temperature coefficient and high initial accuracy. The REF191-EP is a micropower, low dropout voltage device, providing stable output voltage from supplies with low headroom and consuming less than 50 µA of supply current. In sleep mode, which is enabled by applying a low transistor to transistor logic (TTL) or plementary metal-oxide semiconductor (CMOS) level to the SLEEP pin, the output is turned off and supply current is further reduced to less than 15 µA. The REF191-EP reference is specified over the full military temperature range (- 55°C to +125°C). Precision Micropower, Low Dropout Voltage Reference PIN CONFIGURATION DIAGRAM TP 1 8 NIC VS 2 TOP VIEW 7 NIC SLEEP 3 (Not to Scale) 6 OUTPUT GND 4 5 TP 17250-001 NOTES 1. NIC = NO INTERNAL CONNECTION. 2. TP PINS ARE FACTORY TEST POINTS, NO USER CONNECTION. Figure 1. The REF191-EP is available in an 8-lead SOIC package. Pin 1 and Pin 5 (TP) are reserved for in package Zener zaps. To achieve the highest level of accuracy at the output, the Zener zapping technique is used to trim the...