Analog Power AM12N65PCFM
N-Channel MOSFET
| Part No. | AM12N65PCFM |
|---|---|
| Datasheet | AM12N65PCFM Download |
| Manufacturer |  Analog Power |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● Power Supplies
● Motor Drives
● Consumer Electronics AM12N65PCFM VDS (V) 650 PRODUCT SUMMARY rDS(on) (mΩ) 800 @ VGS = 10V 850 @ VGS = 6V ID (A) 7 6.5
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 650 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C VGS ID IDM IS PD ±20 7 30 7 60 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient c Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.5 2.5 Units °C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. © Preliminary 1 Publication Order Number: DS_AM12N65PCFM_1A Analog Power AM12N65PCFM Electrical C...
