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Analog Power
N-Channel 650-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • Power Supplies • Motor Drives • Consumer Electronics
AM14N65P
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
650 650 @ VGS = 10V
ID (A) 14a
DRAIN connected to TAB
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 650
Gate-Source Voltage
Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a
TC=25°C
TC=25°C TC=25°C
VGS ID IDM IS PD
±30 14 60 14 300
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient c Maximum Junction-to-Case
THERMAL RESISTANCE
AM14N65P Datasheet
