Analog Power AM180N10-04M5P
N-Channel MOSFET
| Part No. | AM180N10-04M5P |
|---|---|
| Datasheet | AM180N10-04M5P Download |
| Manufacturer |  Analog Power |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● LED Inverter Circuits
● DC/DC Conversion Circuits
● Motor drives AM180N10-04m5P VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 6.5 @ VGS = 10V 8.5 @ VGS = 5.5V ID (A) 180a DRAIN connected to TAB
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TC=25°C TC=25°C VGS ID IDM IS ±20 180 700 180 Power Dissipation Single Pulse Avalanche Energy d TC=25°C PD EAS 300 500 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W mJ °C Maximum Junction-to-Ambient c Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.5 0.5 Units °C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. d.
