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Analog Power
AM1960NE
Dual N-Channel 60-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • DC/DC Conversion Circuits • Motor Drives
VDS (V) 60
PRODUCT SUMMARY rDS(on) (Ω)
2 @ VGS = 10V 3 @ VGS = 4.5V
ID (A) 0.32 0.26
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
0.32 0.27
2 0.5
Power Dissipation a
TA=25°C TA=70°C
PD
0.3 0.
AM1960NE Datasheet
