AM20N20-125D
Analog Power
N-Channel 200-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones.
- Low r DS(on) provides higher efficiency and extends battery life
- Low thermal impedance copper leadframe DPAK saves board space
- Fast switching speed
- High performance trench technology
PRODUCT SUMMARY
VDS (V) r DS(on) m(Ω)
200 260 @ VGS = 10V 300 @ VGS = 5.5V
ID (A) 12 11
ABSOLUTE MAXIMUM RATINGS (TA = 25 o C UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa
Operating Junction and Storage Temperature Range
VDS VGS TC=25o C ID IDM...
