AM20P06-135D Datasheet | Analog Power

Analog Power P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. - Low r DS(on) provides higher efficiency and extends battery life - Low thermal impedance copper leadframe DPAK saves board space - Fast switching speed - High performance trench technology PRODUCT SUMMARY VDS (V) r DS(on) m(Ω) -60 135 @VGS= -10V 190 @VGS= -4.5V ID (A) 16 ABSOLUTEMAXIMUMRATINGS (TA = 25 o CUNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25o C ID -60 ±20 16 A ±40 Continuous Source Current (Diode Conduction)a IS -15 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25o C PD TJ, Tstg -55 to 175 W o C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum Units o C/W o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction...